Shahe City Jijiu New Materials Co., Ltd

Jing'ao Solar Energy Co., Ltd. is located in Ningjin County, Xingtai City. Established in 2005, with a registered capital of 4.033 billion yuan, it is mainly engaged in the research and development, production, and sales of high-performance solar cells and component products. On February 7, 2007, Jingao Solar was listed on the NASDAQ Stock Exchange in the United States. In September 2018, it was delisted from the United States and the company was changed from a foreign-funded enterprise to a domestic enterprise. Afterwards, it embarked on a new journey of domestic listing. In 2019, it successfully went public through a backdoor listing in China. As of the end of 2019, there are currently 3030 employees and 316 personnel engaged in scientific and technological research and development. Jing'ao Solar adheres to the cultural concept of "happy work, grateful life", takes safety and innovation as the overall development direction, starts with improving product efficiency, focuses on reducing production costs, continuously deepens the construction of corporate culture, and comprehensively enhances Jing'ao's core competitiveness and economic benefits. Belonging to the first batch of enterprises that meet the "Photovoltaic Manufacturing Industry Norms and Conditions" issued by the Ministry of Industry and Information Technology of the People's Republic of China, it is a national high-tech enterprise. In 2018, it obtained honorary qualifications such as "Intelligent Manufacturing Pilot Demonstration (National Level)", "Green Factory (National Level)", "Hebei Province Quality Benefit Enterprise", and "Provincial Safety Culture Construction Demonstration Enterprise". In 2019, it was awarded honorary titles such as "Leading Enterprise in Hebei Province", "Hebei Province Foreign Trade Brand Advantage Enterprise", and "Hebei Province Enterprise Standard (Leader)". In 2019, our company introduced several patented technologies of crystal silicon doped with gallium and P-type gallium doped silicon wafers from Japan's Shinyue Group in the production of battery cells, and has the right to use these patents in multiple countries and regions. 1. The progressiveness of this technology causes the attenuation of crystalline silicon cells. When the temperature is low, the light attenuation of the boron oxygen complex is the main initial light attenuation mechanism of boron doped P-type PERC cells. That is, if the P-type single crystal cells are made of boron doped silicon chips, BO-LID is considered to be the main reason for the initial light attenuation of single crystal cells. After the crystalline silicon battery entered the era of PERC, the influence of BO-LID was further revealed. The PERC battery used the back passivation technology to increase the absorption of long wave incident photons, and the battery efficiency was improved by about 1%. However, the photo generated minority carriers generated at the back of the battery need to go through a far path before they can be effectively separated by the front P/N junction and collected by the electrode, so the initial light attenuation of the PERC battery increased to more than 5%. The effective way to reduce BO-LID is to reduce oxygen content and boron content. Reducing oxygen content will increase manufacturing costs, and reducing boron content will affect the efficiency of battery cells. A mature technology is to use gallium doped silicon wafers, which replace boron doping and completely solve the problem of boron oxygen composite. In addition to BO-LID, gallium doped silicon wafers also have a certain inhibitory effect on LeTID at high temperatures. 2. By optimizing the resistivity of gallium doped wafers and battery process, the efficiency of gallium doped wafers in our company's battery can reach 23%, which is more than 0.1% higher than that of boron doped wafers. This brings annual benefits of over 10 million to the company, and the attenuation of gallium doped wafers is 65% lower than that of boron doped wafers, meeting the customer's standard of not exceeding 2% attenuation in the first year